Electron-Beam-Induced Elastic-Plastic Transition in Si Nanowires

被引：60

作者：

Dai, Sheng ^{[1
]}

Zhao, Jiong ^{[1
]}

Xie, Lin ^{[1
]}

Cai, Yuan ^{[2
,3
]}

Wang, Ning ^{[2
,3
]}

Zhu, Jing ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mat Sci & Engn, Beijing Natl Ctr Elect Microscopy, State Key Lab New Ceram & Fine Proc,Adv Mat Lab, Beijing 100084, Peoples R China

[2] Hong Kong Univ Sci & Technol, William Mong Inst Nano Sci & Technol, Hong Kong, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China

来源：

NANO LETTERS | 2012年 / 12卷 / 05期

关键词：

Silicon nanowires; mechanical properties; in situ TEM; elastic-plastic transition; e-beam irradiation; nanoshaping; LARGE-STRAIN PLASTICITY; SILICON NANOWIRES; TEMPERATURE; ORIENTATION; PERFORMANCE; FABRICATION; MECHANISMS; ARRAYS;

D O I：

10.1021/nl3003528

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

It is generally accepted that silicon nanowires (Si NWs) exhibit linear elastic behavior until fracture without any appreciable plastic deformation. However, the plasticity of Si NWs can be triggered under low strain rate inside the transmission electron microscope (TEM). In this report, two in situ TEM experiments were conducted to investigate the electron-beam (e-beam) effect on the plasticity of Si NWs. An e-beam illuminating with a low current intensity would result in the bond re-forming processes, achieving the plastic deformation with a bent strain over 40% in Si NWs near the room temperature. In addition, an effective method was proposed to shape the Si NWs, where an e-beam-induced elastic-plastic (E-P) transition took place.

引用

页码：2379 / 2385

页数：7

共 45 条

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