Effects of electron irradiation on CuInS2 crystals

被引：1
|
作者：
Abe, K
Miyoshi, Y
Ashida, A
Wakita, K
Ohshima, T
Morishita, N
Kamiya, T
Watase, S
Izaki, M
机构：
[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
[2] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan
[3] Osaka Municipal Tech Res Inst, Joto Ku, Osaka 5368553, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1B期
关键词：
CuInS2; electron irradiation; photoluminescence; defect property; X-ray photoelectron spectroscopy;
D O I：
10.1143/JJAP.44.718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of electron irradiation on CuInS2 single-crystals grown using traveling heater method has been examined using photoluminescence (PL). It has been found that the emission intensities for exciton and donor-acceptor pair transitions decrease, and that the appearance of the structures in deep PL band increases. The peaks which appeared after the electron irradiation appear to be due to the recombination emission, involving deep donors and deep acceptors.
引用
收藏
页码：718 / 721
页数：4
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