Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

被引：27

作者：

Dalmau, Rafael ^{[1
]}

Moody, Baxter ^{[1
]}

机构：

[1] HexaTech Inc, 991 Aviat Pkwy,Ste 800, Morrisville, NC 27560 USA

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8 | 2018年 / 86卷 / 12期

关键词：

SI-DOPED ALN; CONDUCTION; FRACTION; MG;

D O I：

10.1149/08612.0031ecst

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Compositionally graded AlxGa1-xN epilayers were coherently grown on AlN single crystal substrates by MOCVD, and polarization-induced doping was determined by contactless sheet resistance and capacitance-voltage measurements on unintentionally doped, n-type graded layers; and by temperature-dependent Hall effect measurements on a Mg doped, p-type graded layer. The room-temperature resistivity, hole concentration, and hole mobility of the p-type layer graded from x= 1.0 to x= 0.36 were 1.2 Omega cm, 4.5x10(18) cm(-3), and 1.2 cm(2)/Vs, respectively, which represents a significant improvement over traditional, thermally-activated Mg doping in AlGaN alloys.

引用

页码：31 / 40

页数：10

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