Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures

被引：0
|
作者：
Niiyama, Y [1 ]
Murata, T [1 ]
Watanabe, M [1 ]
机构：
[1] Tokyo Inst Technol, Dept Informat Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 14期
关键词：
D O I：
10.1063/1.2081121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We achieved lasing of an optically pumped ultraviolet BeMgZnSe-based quantum-well laser grown closely lattice matched to a GaP substrate. A laser emission wavelength of 373 nm at 13 K was observed. The threshold excitation power density was 0.415 MW/cm(2) at 13 K. In addition, we have demonstrated lasing up to 130 K. This indicates that the BeMgZnSe compound is promising as a new candidate for ultraviolet (UV) laser diodes, which possess potential application for UV optoelectronic integrated circuits UV-OEICs on silicon substrates. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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