The effect of p-doping on multi-state lasing in InAs/InGaAs quantum dot lasers for different cavity lengths

被引：1
|
作者：
Korenev, V. V. [1 ,2 ]
Savelyev, A. V. [1 ]
Maximov, M. V. [1 ,2 ,3 ]
Zubov, F. I. [1 ]
Shernyakov, Yu M. [1 ,3 ]
Zhukov, A. E. [1 ,2 ]
机构：
[1] St Petersburg Acad Univ, RAS, St Petersburg 194021, Russia
[2] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia
[3] RAS, Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷
关键词：
D O I：
10.1088/1742-6596/917/5/052001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of modulation p-doping on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied for different levels of acceptor concentration. It is shown that in case of the short laser cavities, p-doping results in higher output power of the ground-state optical transitions of InAs/InGaAs QDs whereas in longer samples p-doping may result in the decrease of this power component. On the basis of this observation, the optimal design of laser active region and optimal doping level are discussed in details.
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页数：3
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