Extreme ultraviolet source at 6.7 nm based on a low-density plasma

被引：57

作者：

Higashiguchi, Takeshi ^{[1
,2
,3
]}

Otsuka, Takamitsu ^{[1
,2
]}

Yugami, Noboru ^{[1
,2
,3
]}

Jiang, Weihua ^{[4
]}

Endo, Akira ^{[5
]}

Li, Bowen ^{[6
]}

Kilbane, Deirdre ^{[6
]}

Dunne, Padraig ^{[6
]}

O'Sullivan, Gerry ^{[6
]}

机构：

[1] Utsunomiya Univ, Dept Adv Interdisciplinary Sci, CORE, Utsunomiya, Tochigi 3218585, Japan

[2] Utsunomiya Univ, Opt Technol Innovat Ctr OpTIC, Utsunomiya, Tochigi 3218585, Japan

[3] CREST, Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan

[4] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

[5] Waseda Univ, Res Inst Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[6] Univ Coll Dublin, Sch Phys, Dublin 4, Ireland

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 19期

基金：

爱尔兰科学基金会;

关键词：

LITHOGRAPHY LITHOGRAPHY; EMISSION;

D O I：

10.1063/1.3660275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an efficient extreme ultraviolet (EUV) source for operation at lambda = 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2% BW), which is 1.6 times larger than the 0.33% (0.6% BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3660275]

引用

页数：3

共 26 条

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Klosner, MA
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Higashiguchi, Takeshi
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Endo, Akira
O'Sullivan, Gerry
APPLIED PHYSICS LETTERS, 2011, 99 (23)
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Wang Zhi-min
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CHINESE OPTICS, 2020, 13 (01): : 28 - 42
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JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (50)
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JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2012, 11 (02):
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Higashiguchi, Takeshi
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APPLIED PHYSICS LETTERS, 2011, 98 (09)
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PHYSICS OF PLASMAS, 2019, 26 (02)
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APPLIED PHYSICS B-LASERS AND OPTICS, 2010, 101 (1-2): : 213 - 219
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ADVANCES IN X-RAY/EUV OPTICS AND COMPONENTS V, 2010, 7802

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