All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers

被引：65

作者：

Kim, SH

Kim, JH

Yu, BG

Byun, Y

Jeon, YM

Lee, S

Woo, DH

Kim, SH

机构：

[1] Korea Inst Sci & Technol, Photon Res Ctr, Seoul 136791, South Korea

[2] Hankuk Aviat Univ, Dept Liberal Arts & Sci, Koyang 2001, South Korea

[3] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 18期

关键词：

D O I：

10.1049/el:20052320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using gain nonlinearity characteristics of a semiconductor optical amplifier, an all-optical NAND gate at 10 Gbit/s is demonstrated. The all-optical NAND gate operates in single mechanism, which is crossgain modulation. In the NAND gate (A (B) over bar +(A) over bar), Boolean A (B) over bar is obtained by using signal A as a probe beam and signal B as a pump beam in SOA-1. Also, Boolean A is obtained by using the clock signal as a probe beam and signal A as a pump beam in SOA-2. By adding the two outputs from SOA-1 and SOA-2, Boolean (A) over bar +A (B) over bar (logic NAND) can be acquired. The extinction ratio is about 6.1 dB.

引用

页码：1027 / 1028

页数：2

共 7 条

[1] Pattern-effect-free semiconductor optical amplifier achieved using quantum dots [J].