共 50 条
Cation/Anion Substitution in Cu2ZnSnS4 for Improved Photovoltaic Performance
被引:85
|作者:
Ananthoju, Balakrishna
[1
,2
]
Mohapatra, Jeotikanta
[3
]
Jangid, Manoj K.
[4
]
Bahadur, D.
[1
,4
]
Medhekar, N. V.
[1
,5
]
Aslam, M.
[1
,2
,6
]
机构:
[1] Indian Inst Technol, IITB Monash Res Acad, Bombay 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India
[3] Indian Inst Technol, Ctr Res Nanotechnol & Sci CRNTS, Bombay 400076, Maharashtra, India
[4] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India
[5] Monash Univ, Dept Mat Engn, Clayton, Vic 3800, Australia
[6] Indian Inst Technol, Natl Ctr Photovolta Res & Educ, Bombay 400076, Maharashtra, India
来源:
SCIENTIFIC REPORTS
|
2016年
/
6卷
关键词:
FILM SOLAR-CELLS;
THIN-FILMS;
ELECTRICAL-PROPERTIES;
OPTICAL-PROPERTIES;
BAND-GAP;
STANNITE;
GROWTH;
NANOCRYSTALS;
DIFFRACTION;
CONVERSION;
D O I:
10.1038/srep35369
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Cations and anions are replaced with Fe, Mn, and Se in CZTS in order to control the formations of the secondary phase, the band gap, and the micro structure of Cu2ZnSnS4. We demonstrate a simplified synthesis strategy for a range of quaternary chalcogenide nanoparticles such as Cu2ZnSnS4 (CZTS), Cu2FeSnS4 (CFTS), Cu2MnSnS4 (CMTS), Cu2ZnSnSe4 (CZTSe), and Cu2ZnSn(S0.5Se0.5)(4) (CZTSSe) by thermolysis of metal chloride precursors using long chain amine molecules. It is observed that the crystal structure, band gap and micro structure of the CZTS thin films are affected by the substitution of anion/cations. Moreover, secondary phases are not observed and grain sizes are enhanced significantly with selenium doping (grain size similar to 1 mu m). The earth-abundant Cu2MSnS4/Se-4 (M = Zn, Mn and Fe) nanoparticles have band gaps in the range of 1.04-1.51 eV with high optical-absorption coefficients (similar to 10(4) cm(-1)) in the visible region. The power conversion efficiency of a CZTS solar cell is enhanced significantly, from 0.4% to 7.4% with selenium doping, within an active area of 1.1 +/- 0.1 cm(2). The observed changes in the device performance parameters might be ascribed to the variation of optical band gap and microstructure of the thin films. The performance of the device is at par with sputtered fabricated films, at similar scales.
引用
收藏
页数:11
相关论文