Charge transport mechanism in low temperature polycrystalline silicon (LTPS) thin-film transistors

被引：11
|
作者：
Ul Huzaibi, Hassan [1 ,2 ,3 ]
Shi, Xuewen [1 ,2 ,3 ]
Geng, Di [1 ,2 ,3 ]
Lu, Nianduan [1 ,2 ,3 ]
Li, Ling [1 ,2 ,3 ]
Liu, Ming [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China
来源：
AIP ADVANCES | 2019年 / 9卷 / 02期
基金：
中国国家自然科学基金;
关键词：
TECHNOLOGY; MOBILITY;
D O I：
10.1063/1.5082994
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are recently used in many display applications due to its high mobility and high stability. However, its processing at low temperature causes defects which affect charge carrier mobility. So, it is essential to completely understand the effects of defects on charge transport mechanism. In this paper, experimental results are presented to investigate the charge carrier mobility of LTPS device. Furthermore, based on the theoretical model, the charge transport characteristic for LTPS has been interpreted. Our results show that, at low gate voltage, the charge transport of LTPS TFT displays multiple trapping and release mechanism, while free charge carrier transport mechanism at high gate voltage. (c) 2019 Author(s).
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页数：4
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