Charge transport mechanism in low temperature polycrystalline silicon (LTPS) thin-film transistors

被引：11
|
作者：
Ul Huzaibi, Hassan [1 ,2 ,3 ]
Shi, Xuewen [1 ,2 ,3 ]
Geng, Di [1 ,2 ,3 ]
Lu, Nianduan [1 ,2 ,3 ]
Li, Ling [1 ,2 ,3 ]
Liu, Ming [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China
来源：
AIP ADVANCES | 2019年 / 9卷 / 02期
基金：
中国国家自然科学基金;
关键词：
TECHNOLOGY; MOBILITY;
D O I：
10.1063/1.5082994
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are recently used in many display applications due to its high mobility and high stability. However, its processing at low temperature causes defects which affect charge carrier mobility. So, it is essential to completely understand the effects of defects on charge transport mechanism. In this paper, experimental results are presented to investigate the charge carrier mobility of LTPS device. Furthermore, based on the theoretical model, the charge transport characteristic for LTPS has been interpreted. Our results show that, at low gate voltage, the charge transport of LTPS TFT displays multiple trapping and release mechanism, while free charge carrier transport mechanism at high gate voltage. (c) 2019 Author(s).
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Dynamic negative bias temperature instability (NBTI) of low-temperature polycrystalline silicon (LTPS) thin-film transistors
    Liao, J. C.
    Fang, Y. K.
    Kao, C. H.
    Cheng, C. Y.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) : 477 - 479
  • [2] Flexible low-temperature polycrystalline silicon thin-film transistors
    Chang, T-C
    Tsao, Y-C
    Chen, P-H
    Tai, M-C
    Huang, S-P
    Su, W-C
    Chen, G-F
    MATERIALS TODAY ADVANCES, 2020, 5
  • [3] LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FOR DISPLAYS
    HSEIH, BC
    HATALIS, MK
    GREVE, DW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) : 1842 - 1845
  • [4] LOW-TEMPERATURE OPERATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    MORI, H
    HATA, K
    HASHIMOTO, T
    WU, IW
    LEWIS, AG
    KOYANAGI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3710 - 3714
  • [5] Conduction mechanism of polycrystalline silicon thin-film transistors
    Saito, Yoji
    Abe, Kazuhiko
    Kawamoto, Chinami
    Kuwano, Hiroshi
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1988, 71 (06): : 1 - 8
  • [6] On the conduction mechanism in polycrystalline silicon thin-film transistors
    Walker, AJ
    Herner, SB
    Kumar, T
    Chen, EH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (11) : 1856 - 1866
  • [7] Dynamic Degradation Mechanisms of Low Temperature Polycrystalline Silicon Thin-Film Transistors
    Wang, Mingxiang
    Wang, Huaisheng
    Zhang, Meng
    Lu, Xiaowei
    2012 19TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2012,
  • [8] A reliability model for low-temperature polycrystalline silicon thin-film transistors
    Chen, Chih-Yang
    Lee, Jam-Wem
    Lee, Po-Hao
    Chen, Wei-Cheng
    Lin, Hsiao-Yi
    Yeh, Kuan-Lin
    Ma, Ming-Wen
    Wang, Shen-De
    Lei, Tan-Fu
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (05) : 392 - 394
  • [9] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    BROTHERTON, SD
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) : 721 - 738
  • [10] Polycrystalline silicon thin-film transistors
    Wagner, S
    Wu, M
    Min, BGR
    Cheng, IC
    POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 325 - 336
12345