Charge multiplication effect in thin diamond films

被引：11

作者：

Skukan, N. ^{[1
]}

Grilj, V. ^{[1
]}

Sudic, I. ^{[1
]}

Pomorski, M. ^{[2
]}

Kada, W. ^{[3
]}

Makino, T. ^{[4
]}

Kambayashi, Y. ^{[3
]}

Andoh, Y. ^{[3
]}

Onoda, S. ^{[4
]}

Sato, S. ^{[4
]}

Ohshima, T. ^{[4
]}

Kamiya, T. ^{[4
]}

Jaksic, M. ^{[1
]}

机构：

[1] Rudjer Boskovic Inst, Div Expt Phys, Zagreb 10000, Croatia

[2] CEA, LIST, Diamond Sensors Lab, F-91191 Gif Sur Yvette, France

[3] Gunma Univ, Fac Sci & Technol, Div Elect & Informat, Kiryu, Gunma 3768515, Japan

[4] Natl Inst Quantum & Radiol Sci & Technol, Takasaki, Gunma 3701292, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 04期

关键词：

CVD-DIAMOND; IONIZATION; SYSTEM; DIODES;

D O I：

10.1063/1.4959863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Herein, we report on the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly observed in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanche multiplication and radiation detectors with extreme radiation hardness. Published by AIP Publishing.

引用

页数：5

共 26 条

[11] Fabrication and properties of lateral p-i-p structures using single-crystalline CVD diamond layers for high electric field applications
Irie, M
Endo, S
Wang, CL
Ito, T
[J]. DIAMOND AND RELATED MATERIALS, 2003, 12 (09) : 1563 - 1568
[12] Isberg J., 2006, Advances in Science and Technology, V48, P73, DOI 10.4028/www.scientific.net/AST.48.73
[13] New capabilities of the Zagreb ion microbeam system
Jaksic, M.
Radovic, I. Bogdanovc
Bogovac, M.
Desnica, V.
Fazinic, S.
Karlusic, M.
Medunic, Z.
Muto, H.
Pastuovic, Z.
Siketic, Z.
Skukan, N.
Tadic, T.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 260 (01) : 114 - 118
[14] Knoll G.F., 1989, Radiation Detection and Measurement, V2nd
[15] KONOROVA EA, 1983, SOV PHYS SEMICOND+, V17, P146
[16] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES
MCINTYRE, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +
[17] AVALANCHE BREAKDOWN IN SILICON
MCKAY, KG
[J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884
[18] Impurity impact ionization avalanche in p-type diamond
Mortet, V.
Soltani, A.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (20)
[19] Diamond particle detectors systems in high energy physics
Oh, A.
[J]. JOURNAL OF INSTRUMENTATION, 2015, 10
[20] Pan L.S., 1995, Diamond: Electrical Properties and Applications

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