An Integrated Power-Efficient Active Rectifier With Offset-Controlled High Speed Comparators for Inductively Powered Applications

被引:165
作者
Lee, Hyung-Min [1 ]
Ghovanloo, Maysam [1 ]
机构
[1] Georgia Inst Technol, GT Bion Lab, Sch Elect & Comp Engn, Atlanta, GA 30308 USA
基金
美国国家科学基金会;
关键词
Active rectifier; back telemetry; high speed comparators; implantable microelectronic devices; inductive power transmission; load shift keying; offset control; RFID; FULL-WAVE RECTIFIER; CMOS RECTIFIER; BACK TELEMETRY; INTERFACE; DESIGN;
D O I
10.1109/TCSI.2010.2103172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-mu m 3M2P standard CMOS process, occupying 0.18 mm(2) of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Omega load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested.
引用
收藏
页码:1749 / 1760
页数:12
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