Comparison of antimony selenide thin films obtained by electrochemical deposition and selenization of a metal precursor

被引:3
作者
Shongalova, Aigul [1 ]
Aitzhanov, Madi [2 ]
Zhantuarov, Sultan [1 ]
Urazov, Kazhmukhan [3 ]
Fernandes, Paulo [4 ,5 ,6 ]
Tokmoldin, Nurlan [1 ]
Correia, Maria Rosario [4 ]
机构
[1] Satbayev Univ, Inst Phys & Technol, 11 Ibragimov St, Alma Ata 050032, Kazakhstan
[2] Al Farabi Kazakh Natl Univ, 71 Al Farabi Ave, Alma Ata 050040, Kazakhstan
[3] DV Sokolsky Inst Fuels Catalysis & Electrochem, Alma Ata 480100, Kazakhstan
[4] Univ Aveiro, I3N Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal
[5] Inst Politecn Porto, Inst Super Engn Porto, CIETI Dept Fis, Rua Dr Antonio Bernardino de Almeida 431, P-4200072 Porto, Portugal
[6] INL Int Iberian Nanotechnol Lab, Av Mestre Jose Veiga, P-4715330 Braga, Portugal
关键词
Antimony selenide; Electrochemical deposition; RF magnetron sputtering; Annealing; Selenization; SOLAR-CELLS; THERMAL EVAPORATION; SB2SE3; ELECTRODEPOSITION; LOCALIZATION; TEMPERATURE; PERFORMANCE; MECHANISM; GROWTH; LAYERS;
D O I
10.1016/j.matpr.2019.11.291
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we present a study comparing two methods of Sb2Se3 deposition, namely electrochemical deposition and selenization of a thin-film metallic Sb - precursor deposited by magnetron sputtering. The Sb selenization process was carried out in the range of temperatures from 270 degrees C to 350 degrees C in an argon atmosphere enriched with elemental Se vapor. Electrochemical deposition of Sb2Se3 was performed in a three-electrode cell at constant potential. Following electrochemical deposition, the samples were annealed in argon at temperatures ranging from 270 degrees C to 350 degrees C. Characterization of the obtained thin films was performed using X-ray diffraction, Raman spectroscopy and optical transmission. Both deposition methods demonstrate successful emergence of the selenide phase, albeit with the presence of varying levels of antimony oxide. The possibility of preferential growth was observed, which is suggested as dependent on growth method and annealing temperature. (C) 2019 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the 7th International Conference on Nanomaterials and Advanced Energy Storage Systems.
引用
收藏
页码:77 / 82
页数:6
相关论文
共 50 条
[21]   Thermally induced structural evolution and performance of Sb2Se3 films and nanorods prepared by an easy sputtering method [J].
Liang, Guang-Xing ;
Zheng, Zhuang-Hao ;
Fan, Ping ;
Luo, Jing-Ting ;
Hu, Ju-Guang ;
Zhang, Xiang-Hua ;
Ma, Hong-Li ;
Fan, Bo ;
Luo, Zhong-Kuan ;
Zhang, Dong-Ping .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 174 :263-270
[22]   Contrastive investigation on linear optical properties and nonlinear absorption behaviors between Sb2Se3 and Sb2Te3 thin films [J].
Liu, Chunmin ;
Cheng, Ling ;
Yuan, Yafei ;
Su, Jing ;
Zhang, Xintong ;
Li, Xiangxiang ;
Zhao, Haibin ;
Zhang, Hao ;
Zheng, Yuxiang ;
Li, Jing .
MATERIALS RESEARCH EXPRESS, 2019, 6 (08)
[23]   Improving the performance of Sb2Se3 thin film solar cells over 4% by controlled addition of oxygen during film deposition [J].
Liu, Xinsheng ;
Chen, Chao ;
Wang, Liang ;
Zhong, Jie ;
Luo, Miao ;
Chen, Jie ;
Xue, Ding-Jiang ;
Li, Dengbing ;
Zhou, Ying ;
Tang, Jiang .
PROGRESS IN PHOTOVOLTAICS, 2015, 23 (12) :1828-1836
[24]   Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells [J].
Liu, Xinsheng ;
Chen, Jie ;
Luo, Miao ;
Leng, Meiying ;
Xia, Zhe ;
Zhou, Ying ;
Qin, Sikai ;
Xue, Ding-Jiang ;
Lv, Lu ;
Huang, Han ;
Niu, Dongmei ;
Tang, Jiang .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (13) :10687-10695
[25]   A novel method for the deposition of nanocrystalline Bi2Se3, Sb2Se3 and Bi2Se3-Sb2Se3 thin films -: SILAR [J].
Lokhande, CD ;
Sankapal, BR ;
Sartale, SD ;
Pathan, HM ;
Giersig, M ;
Ganesan, V .
APPLIED SURFACE SCIENCE, 2001, 182 (3-4) :413-417
[26]   Controlled Synthesis of One-Dimensional Sb2Se3 Nanostructures and Their Electrochemical Properties [J].
Ma, Jianmin ;
Wang, Yaping ;
Wang, Yijing ;
Chen, Qing ;
Lian, Jiabiao ;
Zheng, Wenjun .
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (31) :13588-13592
[27]   Exciton localization and the Stokes' shift in InGaN epilayers [J].
Martin, RW ;
Middleton, PG ;
O'Donnell, KP ;
Van der Stricht, W .
APPLIED PHYSICS LETTERS, 1999, 74 (02) :263-265
[28]   Waveguiding and confinement of light in semiconductor oxide microstructures [J].
Mendez, B. ;
Cebriano, T. ;
Lopez, I. ;
Nogales, E. ;
Piqueras, J. .
OXIDE-BASED MATERIALS AND DEVICES IV, 2013, 8626
[29]   SB2O3/SB2O4 IN REDUCING/OXIDIZING ENVIRONMENTS - AN IN-SITU RAMAN-SPECTROSCOPY STUDY [J].
MESTL, G ;
RUIZ, P ;
DELMON, B ;
KNOZINGER, H .
JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (44) :11276-11282
[30]  
NAKANE Y, 1985, P SOC PHOTO-OPT INST, V529, P76, DOI 10.1117/12.946435