Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material

被引:31
|
作者
Wang, Chun-Hsien [1 ]
Hsieh, Hsien-Chien [1 ]
Lee, Hsin-Yi [2 ]
Wu, Albert T. [1 ]
机构
[1] Natl Cent Univ, Dept Chem & Mat Engn, Taoyuan 32001, Taiwan
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan
关键词
Thermoelectric materials; electroless Co-P; diffusion barrier; interfacial reaction; shear strength; INTERFACIAL REACTIONS; POWER;
D O I
10.1007/s11664-018-6633-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
(Bi0.25Te0.75)(2)Te-3 (p-Bi2Te3) is thermoelectric material that can harvest waste heat into useful electric power. A severe reaction between p-Bi2Te3 and Sn-based solder decreases the reliability of thermoelectric modules. Sn/p-Bi2Te3 and Sn3.0Ag0.5Cu (SAC305)/p-Bi2Te3 with and without electroless Co-P at the interfaces were investigated in this study. Without a Co-P layer, brittle SnTe, Sn3Sb2, and Bi precipitates formed at the interface. A thin layer of SnTe after reflow results in growth of a layer-type Sn3Sb2 instead of a strip-like Sn3Sb2. The addition of a Co-P layer to both systems successfully inhibited the formation of brittle intermetallic compounds. Shear test results confirmed that the Co-P diffusion barrier also effectively increased the joint strength.
引用
收藏
页码:53 / 57
页数:5
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