Ultrasonic waves in a piezoelectric semiconductor quantum plasma: the gain analysis

Weexamined the amplification of ultrasonic waves in a GaAs solid state plasma. Weused a set of quantum fluid equations to investigate the effects of plasma components quantum recoil, exchangecorrelation forces, and quantum pressure of plasma carriers. Characteristic parameters of doped n-GaAs, p-GaAs, and n-p-GaAs semiconductors are used to evaluate the ultrasonic gain applying the dispersion relations and their modifications. It is found that the frequency of ultrasonic waves can be impressed by exchange-correlation potential, and the gain has a sensitivity to variation of density (n(0)), wave frequency (w), and drift velocity. The results reveal the propagation of ultrasonicwaves via a GaAs plasma reduces the gain coefficient.