Ultrasonic waves in a piezoelectric semiconductor quantum plasma: the gain analysis

被引：3

作者：

Firouzi, M. Hosseinzade ^{[1
]}

Mehramiz, A. ^{[1
]}

机构：

[1] Imam Khomeini Int Univ, Fac Basic Sci, Phys Dept, Qazvin 3419416818, Iran

来源：

PHYSICA SCRIPTA | 2021年 / 96卷 / 12期

关键词：

gain; piezoelectric; ultrasonic; wave; quantum; AMPLIFICATION; INSTABILITY; DISPERSION; DEGENERATE;

D O I：

10.1088/1402-4896/ac3440

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Weexamined the amplification of ultrasonic waves in a GaAs solid state plasma. Weused a set of quantum fluid equations to investigate the effects of plasma components quantum recoil, exchangecorrelation forces, and quantum pressure of plasma carriers. Characteristic parameters of doped n-GaAs, p-GaAs, and n-p-GaAs semiconductors are used to evaluate the ultrasonic gain applying the dispersion relations and their modifications. It is found that the frequency of ultrasonic waves can be impressed by exchange-correlation potential, and the gain has a sensitivity to variation of density (n(0)), wave frequency (w), and drift velocity. The results reveal the propagation of ultrasonicwaves via a GaAs plasma reduces the gain coefficient.

引用

页数：8

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