Silicon Carbide and Diamond Field Emission Cathodes

被引：0
|
作者：
Golubkov, Vladimir A. [1 ]
Ilyin, Vladimir A. [1 ]
Kuznetsova, Maria A. [1 ]
Serkov, Anton V. [1 ]
机构：
[1] St Petersburg Electrotech Univ LETI, Dept Micro & Nanoelect, St Petersburg, Russia
来源：
PROCEEDINGS OF THE 2016 IEEE NORTH WEST RUSSIA SECTION YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING CONFERENCE (ELCONRUSNW) | 2016年
基金：
俄罗斯科学基金会;
关键词：
silicon carbide; nanocrystalline diamond; CVD; field emission cathod; reactive ion etching (RIE); matrix microcathode;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The study results of template-based field emission hexagonal silicon carbide 6H-SiC < N > cathodes with micro-shaped surface covered with thin CVD-deposited nanocrystalline diamond layer are presented below. The current-voltage characteristics of 6H-SiC cathodes with non-doped and boron-doped diamond layers were experimentally obtained. The study touches upon the issue of inhomogeneity factors of the electric field influence upon the emission properties of the entire cathodes, electron emission from silicon carbide into a diamond layer and emission from a diamond surface into vacuum.
引用
收藏
页码：45 / 46
页数：2
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