Electric-field gradient characterization at 181Ta impurities in sapphire single crystals

被引:9
|
作者
Rentería, M
Darriba, GN
Errico, LA
Muñoz, EL
Eversheim, PD
机构
[1] Natl Univ La Plata, Fac Ciencias Exactas, Dept Fis, RA-1900 La Plata, Argentina
[2] Univ Bonn, Helmholtz Inst Strahlen & Kernphys, ISKP, D-53115 Bonn, Germany
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 09期
关键词
D O I
10.1002/pssb.200461801
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report Perturbed-Angular-Correlation (PAC) experiments on corundum Al2O3 single crystals implanted with Hf-181/Ta-181 ions at the ISKP at Bonn and measured at La Plata with high efficiency and time-resolution. The magnitude, asymmetry, and orientation (with respect to the crystalline axes) of the electric-field gradient (EFG) tensor were determined measuring the spin-rotation curves as a function of different orientations of the single crystals relative to the detector system. These results are analyzed in the framework of point-charge model and ab initio Full-Potential Linearized-Augmented Plane Wave calculations, and compared with EFG results coming from PAC experiments with In-111/Cd-111 impurities. This combined study enables the determination of lattice relaxations induced by the presence of the impurity and the state of charge of a deep impurity donor level in the band gap of the semiconductor. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1928 / 1932
页数:5
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