Growth anisotropy and pattern formation in metal epitaxy

被引：47
作者：
Jorritsma, LC
Bijnagte, M
Rosenfeld, G
Poelsema, B
机构：
[1] UNIV TWENTE, MAT RES CTR, NL-7500 AE ENSCHEDE, NETHERLANDS
[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST GRENZFLACHENFORSCH & VAKUUMPHYS, D-52425 JULICH, GERMANY
来源：
PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 05期
关键词：
D O I：
10.1103/PhysRevLett.78.911
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Evidence for the formation of growth induced, ordered checkerboardlike arrangements of mesas has been obtained. These patterns develop on a metal substrate with square symmetry after deposition of tens of monolayers. Its origin is traced back to laterally anisotropic advance rates of island edges in combination with slope selection. The foundation for the mesa arrangement is already laid just after coalescence of the adatom islands in the first monolayer. The results are exemplified in a high resolution surface diffraction study for the growth of Cu on Cu(001).
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页码：911 / 914
页数：4
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