Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities

被引:435
作者
Liang, Shi-Jun [1 ]
Cheng, Bin [1 ]
Cui, Xinyi [2 ]
Miao, Feng [1 ]
机构
[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Sch Environm, State Key Lab Pollut Control & Resource Reuse, Nanjing 210046, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; photodetectors; spintronic devices; van der Waals heterostructures; vertical transistors; TRANSITION-METAL-DICHALCOGENIDE; FIELD-EFFECT TRANSISTORS; P-N-JUNCTIONS; BLACK PHOSPHORUS; 2-DIMENSIONAL MATERIALS; BROAD-BAND; PHOTOCURRENT GENERATION; EPITAXIAL-GROWTH; TRANSPORT-PROPERTIES; CHARGE-TRANSPORT;
D O I
10.1002/adma.201903800
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The discovery of two-dimensional (2D) materials with unique electronic, superior optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of material science, condensed matter physics, and device physics. Vertically stacking 2D materials with distinct electronic and optical as well as magnetic properties enables the creation of a large variety of van der Waals heterostructures. The diverse properties of the vertical heterostructures open unprecedented opportunities for various kinds of device applications, e.g., vertical field-effect transistors, ultrasensitive infrared photodetectors, spin-filtering devices, and so on, which are inaccessible in conventional material heterostructures. Here, the current status of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic memory/transistors is reviewed. The relevant challenges for achieving high-performance devices are presented. An outlook into the future development of vertical heterostructure devices with integrated electronic and optoelectronic as well as spintronic functionalities is also provided.
引用
收藏
页数:27
相关论文
共 230 条
[1]  
Ajayan Pulickel, 2016, Physics Today, V69, P38, DOI 10.1063/PT.3.3297
[2]   Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures [J].
Albarakati, Sultan ;
Tan, Cheng ;
Chen, Zhong-Jia ;
Partridge, James G. ;
Zheng, Guolin ;
Farrar, Lawrence ;
Mayes, Edwin L. H. ;
Field, Matthew R. ;
Lee, Changgu ;
Wang, Yihao ;
Xiong, Yiming ;
Tian, Mingliang ;
Xiang, Feixiang ;
Hamilton, Alex R. ;
Tretiakov, Oleg A. ;
Culcer, Dimitrie ;
Zhao, Yu-Jun ;
Wang, Lan .
SCIENCE ADVANCES, 2019, 5 (07)
[3]   Highly Efficient Spin-Orbit Torque and Switching of Layered Ferromagnet Fe3GeTe2 [J].
Alghamdi, Mohammed ;
Lohmann, Mark ;
Li, Junxue ;
Jothi, Palani R. ;
Shao, Qiming ;
Aldosary, Mohammed ;
Su, Tang ;
Fokwa, Boniface P. T. ;
Shi, Jing .
NANO LETTERS, 2019, 19 (07) :4400-4405
[4]   Electrical contacts to two-dimensional semiconductors [J].
Allain, Adrien ;
Kang, Jiahao ;
Banerjee, Kaustav ;
Kis, Andras .
NATURE MATERIALS, 2015, 14 (12) :1195-1205
[5]   Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys [J].
Amani, Matin ;
Regan, Emma ;
Bullock, James ;
Ahn, Geun Ho ;
Javey, Ali .
ACS NANO, 2017, 11 (11) :11724-11731
[6]   Theoretical modeling of electron emission from graphene [J].
Ang, Y. S. ;
Liang, Shi-Jun ;
Ang, L. K. .
MRS BULLETIN, 2017, 42 (07) :506-510
[7]   Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion [J].
Ang, Y. S. ;
Ang, L. K. .
PHYSICAL REVIEW APPLIED, 2016, 6 (03)
[8]   Generalized High-Energy Thermionic Electron Injection at Graphene Interface [J].
Ang, Yee Sin ;
Chen, Yueyi ;
Tan, Chuan ;
Ang, L. K. .
PHYSICAL REVIEW APPLIED, 2019, 12 (01)
[9]   Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials [J].
Ang, Yee Sin ;
Yang, Hui Ying ;
Ang, L. K. .
PHYSICAL REVIEW LETTERS, 2018, 121 (05)
[10]  
[Anonymous], 2017, Small, DOI DOI 10.1002/SMLL.201701478