InAs/InP quantum dots stacking: Impact of spacer layer on optical properties

The optical properties of a vertical multilayer stack of semiconductor self-assembled quantum dots (QDs) depend on the coupling status. We present an improved modeling method for analysis of QD stacks, consisting of several separate steps in the elastic strain analysis, to reproduce the realistic unidirectional strain accumulation along the QD growth direction from lower and upper dots. Based on this modeling method, by varying the spacer thickness, we systematically study a large variety of QD stack structures, for better understanding the influence of strain and electronic coupling mechanisms. A "quasi continuum band" or highly degenerate excited state (ES) is found in the closely multi-stacked QDs, probably accounting for the occurrence of distinct blueshifting of the photoluminescence peak wavelength for the decreasing spacer thickness. The enhanced ES emission from this type of stacking QD modeled by using rate equations may pave a way for designing potential high-performance laser devices operating on ES.