Electromagnetically induced transparency from electron spin coherences in semiconductor quantum wells [Invited]

被引:17
作者
Wang, Hailin [1 ,2 ]
O'Leary, Shannon [3 ]
机构
[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
[2] Univ Oregon, Oregon Ctr Opt, Eugene, OR 97403 USA
[3] Lewis & Clark Coll, Dept Phys, Portland, OR 97219 USA
关键词
ATOMIC ENSEMBLES; GROUP-VELOCITY; PHOTON STATES; SLOW LIGHT; GAAS; SPECTROSCOPY; EXCITONS; STORAGE; MEMORY; VAPOR;
D O I
10.1364/JOSAB.29.0000A6
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, we review our recent experimental studies on electromagnetically induced transparency (EIT) from electron spin coherences in semiconductor quantum wells. Coherent Raman resonances, manifestations of EIT from electron spin coherences at relatively low pump intensities, were demonstrated in both V-type and.-type three-level systems via heavy-hole exciton and trion transitions in undoped and doped quantum wells, respectively. Coherent Raman resonances from electron spin coherences via light-hole transitions were also demonstrated in a waveguide geometry that enables a long optical interaction length as well as a large absorption coefficient. Experimental approaches that can avoid or reduce detrimental many-body effects in quantum wells are suggested for the realization of nearly ideal EIT processes.(C) 2012 Optical Society of America
引用
收藏
页码:A6 / A16
页数:11
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