Magneto-transport study of Landau level broadening in a gated AlGaAs/GaAs parabolic quantum well structure

被引:3
|
作者
Zhou, Y. M. [1 ]
Yu, G. [2 ]
Lin, T. [2 ]
Dai, N. [2 ]
Chu, J. H. [2 ]
机构
[1] Hubei Univ Technol, Sch Elect & Elect Engn, Wuhan 430068, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
基金
中国国家自然科学基金;
关键词
Parabolic quantum well; Two-dimensional electron gas; Landau level broadening; Shubnikov-de Haas oscillation; 2-DIMENSIONAL ELECTRON-SYSTEMS; DENSITY; STATES; GAS; MAGNETIZATION;
D O I
10.1016/j.physb.2011.09.136
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the Landau level broadening by analyzing the Shubnikov-de Haas oscillations in a gated AlGaAs/GaAs parabolic quantum well structure when only one electronic subband is occupied. Small-angle scattering is determined to be important in this system. The Shubnikov-de Haas oscillations are described equally well by employing Gaussian or Lorentzian broadening of the Landau levels at low magnetic field where the quantum localization effect is not important. A possible explanation is that the electron-electron interactions lead to the overlapping of adjacent Landau levels and one can not distinguish between the two broadening types. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:116 / 119
页数:4
相关论文
共 50 条
  • [1] Quantum and transport mobilities in an AlGaAs/GaAs parabolic quantum-well structure
    Yu, G
    Studenikin, SA
    SpringThorpe, AJ
    Aers, GC
    Austing, DG
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [2] QUANTUM INTERFERENCE AND LANDAU-LEVEL BROADENING IN NARROW GAAS ALGAAS CHANNELS
    GREENE, SK
    PEPPER, M
    PEACOCK, DC
    RITCHIE, DA
    LAW, VJ
    NEWBURY, R
    FROST, JEF
    JONES, GAC
    BROWN, RJ
    AHMED, H
    HASKO, D
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (08) : 1003 - 1010
  • [3] LANDAU-LEVEL BROADENING IN GAAS/ALGAAS HETEROJUNCTIONS
    ANDO, T
    MURAYAMA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (04) : 1519 - 1527
  • [4] Transport properties of AlGaAs/GaAs parabolic quantum wells
    Gao, K. H.
    Yu, G.
    Zhou, Y. M.
    Zhou, W. Z.
    Lin, T.
    Chu, J. H.
    Dai, N.
    SpringThorpe, A. J.
    Austing, D. G.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
  • [5] PHOTOCURRENT IN A SCHOTTKY-GATED ALGAAS/GAAS STRUCTURE WITH A SINGLE-QUANTUM-WELL
    ZHOKHOVETS, SV
    GOLDHAHN, R
    GOBSCH, G
    STEIN, N
    CHAMBERLAIN, JM
    CHENG, TS
    HENINI, M
    SEMICONDUCTORS, 1995, 29 (07) : 639 - 647
  • [6] LIFETIME BROADENING IN GAAS-ALGAAS QUANTUM-WELL LASERS
    KUCHARSKA, AI
    ROBBINS, DJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (03) : 443 - 448
  • [7] Carrier kinetics and population inversion in Landau level system in cascade GaAs/AlGaAs quantum well structures
    Telenkov, M. P.
    Mityagin, Yu. A.
    Kartsev, P. F.
    OPTICAL AND QUANTUM ELECTRONICS, 2014, 46 (06) : 759 - 767
  • [8] Carrier kinetics and population inversion in Landau level system in cascade GaAs/AlGaAs quantum well structures
    M. P. Telenkov
    Yu. A. Mityagin
    P. F. Kartsev
    Optical and Quantum Electronics, 2014, 46 : 759 - 767
  • [9] Anomalous dephasing of two-dimensional electrons in an AlGaAs/GaAs parabolic quantum well structure
    Gao, K. H.
    Yu, G.
    SpringThorpe, A. J.
    Austing, D. G.
    Lin, T.
    Hu, G. J.
    Dai, N.
    Chu, J. H.
    SOLID STATE COMMUNICATIONS, 2011, 151 (21) : 1537 - 1540
  • [10] LANDAU-LEVEL BROADENING AND SCATTERING TIME IN MODULATION DOPED GAAS/ALGAAS HETEROSTRUCTURES
    FANG, FF
    SMITH, TP
    WRIGHT, SL
    SURFACE SCIENCE, 1988, 196 (1-3) : 310 - 315