Growth defects in GaN films on 6H-SiC substrates

被引：68

作者：

Chien, FR ^{[1
]}

Ning, XJ ^{[1
]}

Stemmer, S ^{[1
]}

Pirouz, P ^{[1
]}

Bremser, MD ^{[1
]}

Davis, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 19期

关键词：

D O I：

10.1063/1.116279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice defects in GaN epilayers grown on 6H-SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half-loops with Burgers vectors 1/3[11(2) over bar 0], [0001], and 1/3[11(2) over bar 3]. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs). (C) 1996 American Institute of Physics.

引用

页码：2678 / 2680

页数：3

共 11 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
AMANO, H
SAWAKI, N
AKASAKI, I
TOYODA, Y
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
[3] Hirsch, 1965, ELECT MICROSCOPY THI
[4] ELECTRON-MICROSCOPY CHARACTERIZATION OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON SAPPHIRE AND SIC
LILIENTALWEBER, Z
SOHN, H
NEWMAN, N
WASHBURN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1578 - 1581
[5] Growth defects in GaN films on sapphire: The probable origin of threading dislocations
Ning, XJ
Chien, FR
Pirouz, P
Yang, JW
Khan, MA
[J]. JOURNAL OF MATERIALS RESEARCH, 1996, 11 (03) : 580 - 592
[6] MICROSTRUCTURE OF GAN EPITAXY ON SIC USING ALN BUFFER LAYERS
PONCE, FA
KRUSOR, BS
MAJOR, JS
PLANO, WE
WELCH, DF
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (03) : 410 - 412
[7] SUBSTRATE-POLARITY DEPENDENCE OF METAL-ORGANIC VAPOR-PHASE EPITAXY-GROWN GAN ON SIC
SASAKI, T
MATSUOKA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4531 - 4535
[8] CHARACTERIZATION OF STRUCTURAL DEFECTS IN WURTZITE GAN GROWN ON 6H SIC USING PLASMA-ENHANCED MOLECULAR-BEAM EPITAXY
SMITH, DJ
CHANDRASEKHAR, D
SVERDLOV, B
BOTCHKAREV, A
SALVADOR, A
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1830 - 1832
[9] GAN, AIN, AND INN - A REVIEW
STRITE, S
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1237 - 1266
[10] FORMATION OF THREADING DEFECTS IN GAN WURTZITE FILMS GROWN ON NONISOMORPHIC SUBSTRATES
SVERDLOV, BN
MARTIN, GA
MORKOC, H
SMITH, DJ
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (14) : 2063 - 2065

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