Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes

被引：0
|
作者：
Gaur, Abhinav [1 ]
Filmer, Matthew [1 ]
Thomas, Paul [1 ]
Bhatnagar, Kunal [2 ]
Droopad, Ravi [2 ]
Rommel, Sean [1 ]
机构：
[1] Rochester Inst Technol, Dept Elect & Microelect Engn, Rochester, NY 14623 USA
[2] Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USA
来源：
SOLID-STATE ELECTRONICS | 2015年 / 111卷
基金：
美国国家科学基金会;
关键词：
Sub-micron; III-V; In0.53Ga0.47As; p-i-n; GAAS;
D O I：
10.1016/j.sse.2015.03.016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of scaling on off-state current of p-i-n diodes is studied. A sub-micron p-i-n diode exhibits a dominating surface component of leakage current. Variation in i-layer thickness has an impact on bulk leakage. Bulk leakage scales with cross-sectional area of the diode and surface leakage has been controlled using surface treatments to give ultra low leakage currents of 210 fA for a device of cross sectional area of 0.44 mu m(2). Devices of 100 nm i-layer thickness show an average bulk and surface current densities of 100 mA/cm(2) and 150 fA/mu m, respectively. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：234 / 237
页数：4
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