Nonstationary response of MSM photodetectors

被引：6

作者：

Gvozdic, DM

Radunovic, JB

机构：

[1] Faculty of Electrical Engineering, University of Belgrade

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 02期

关键词：

D O I：

10.1109/16.481745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper analyses the influence of nonstationary effects on carrier transport in Metal- Semiconductor-Metal Photodetector (MSM-PD) made of a two-valley semiconductor. A phenomenological model is used for 2D numerical simulation of carrier transport and intervalley transfer. The complete analysis of the time and frequency response of the MSM-PD has been made for various micron and submicron structures, bias voltages and incident light wavelengths.

引用

页码：370 / 372

页数：3

共 11 条

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