Effects of deposition pressure and plasma power on the growth and properties of boron-doped micro crystalline silicon films

被引：0

作者：

Chen Yong-Sheng ^{[1
,2
]}

Yang Shi-E ^{[1
]}

Wang Jian-Hua ^{[3
]}

Lu Jing-Xiao ^{[1
]}

Gao Xiao-Yong ^{[1
]}

Gu Jin-Hua ^{[1
]}

Zheng Wen ^{[1
]}

Zhao Shang-Li ^{[1
]}

机构：

[1] Zhengzhou Univ, Dept Phys, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China

[2] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China

[3] Wuhan Inst Technol, Dept Mat Sci & Engn, Wuhan 430073, Peoples R China

来源：

CHINESE PHYSICS B | 2008年 / 17卷 / 04期

关键词：

boron-doped mu c-Si : H films; thin film solar cells; Raman crystallinity; dark conductivity;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using diborane as doping gas, p-doped mu c-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of deposition pressure and plasma power on the growth and the proper-ties of mu c-Si:H layers are investigated. The results show that the deposition rate, the electrical and the structural proper-ties are all strongly dependent on deposition pressure and plasma power. Boron-doped mu c-Si:H films with a dark conductivity as high as 1.42 Omega(-1).cm(-1) and a crystallinity of above 50% are obtained. With this p-layer, mu pc-Si:H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped mu c-Si:H layers is discussed.

引用

页码：1394 / 1399

页数：6

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