Excited-state Transitions of Self-assembled InAs/InAlGaAs Quantum Dots

被引：4

作者：

Lee, Kwanjae ^{[1
]}

Jo, Byounggu ^{[1
]}

Lee, Cheul-Ro ^{[1
]}

Kim, Jin Soo ^{[1
]}

Kim, Jong Su ^{[2
]}

Noh, Sam Kyu ^{[3
]}

Leem, Jae-Young ^{[4
]}

机构：

[1] Chonbuk Natl Univ, RCAMD, Div Adv Mat Engn, Jeonju 561756, South Korea

[2] Yeungnam Univ, Dept Phys, Gyongsan 712749, South Korea

[3] Korea Res Inst Stand & Sci, Taejon 305340, South Korea

[4] Inje Univ, Sch Nano Engn, Gimhae 621749, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 59卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

lifiAs/InAlGaAs; Quantum dot; Excited-state transition; PHOTOLUMINESCENCE; INP; WAVELENGTH; INALGAAS; GROWTH; LAYER;

D O I：

10.3938/jkps.59.3391

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the structural and optical properties of self-assembled (SA) InAs/InAlGaAs quantum dots (QDs) grown on InP substrates by using molecular-beam epitaxy. When the amount of the arsenic supply and the deposition time were varied, the shape of the SA InAs/InAlGaAs QDs was modified to a relatively round shape, and the QD height was increased from 1.07 to 2.89 am. From the power and temperature dependences of the PL spectra, the excited-state transitions were confirmed from SA In As QDs with a material system of InAlGaAs-InP. This is the first observation of clear excited-state transitions for SA InAs/InAlGaAs QDs on InP.

引用

页码：3391 / 3395

页数：5

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