Excited-state Transitions of Self-assembled InAs/InAlGaAs Quantum Dots

被引：4
|
作者：
Lee, Kwanjae [1 ]
Jo, Byounggu [1 ]
Lee, Cheul-Ro [1 ]
Kim, Jin Soo [1 ]
Kim, Jong Su [2 ]
Noh, Sam Kyu [3 ]
Leem, Jae-Young [4 ]
机构：
[1] Chonbuk Natl Univ, RCAMD, Div Adv Mat Engn, Jeonju 561756, South Korea
[2] Yeungnam Univ, Dept Phys, Gyongsan 712749, South Korea
[3] Korea Res Inst Stand & Sci, Taejon 305340, South Korea
[4] Inje Univ, Sch Nano Engn, Gimhae 621749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2011年 / 59卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
lifiAs/InAlGaAs; Quantum dot; Excited-state transition; PHOTOLUMINESCENCE; INP; WAVELENGTH; INALGAAS; GROWTH; LAYER;
D O I：
10.3938/jkps.59.3391
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the structural and optical properties of self-assembled (SA) InAs/InAlGaAs quantum dots (QDs) grown on InP substrates by using molecular-beam epitaxy. When the amount of the arsenic supply and the deposition time were varied, the shape of the SA InAs/InAlGaAs QDs was modified to a relatively round shape, and the QD height was increased from 1.07 to 2.89 am. From the power and temperature dependences of the PL spectra, the excited-state transitions were confirmed from SA In As QDs with a material system of InAlGaAs-InP. This is the first observation of clear excited-state transitions for SA InAs/InAlGaAs QDs on InP.
引用
收藏
页码：3391 / 3395
页数：5
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