Dielectric properties of epitaxial Ba0.5Sr0.5TiO3 films on amorphous SiO2 on sapphire -: art. no. 072905

被引：20
|
作者：
Li, H [1 ]
Finder, J
Liang, Y
Gregory, R
Qin, W
机构：
[1] Motorola Labs, Embedded Syst & Phys Sci Lab, Tempe, AZ 85284 USA
[2] Freescale Semicond Inc, Adv Prod Res & Dev Lab, Tempe, AZ 85284 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期
关键词：
D O I：
10.1063/1.2011774
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The strain-relieved crystalline Ba0.5Sr0.5TiO3 (BST) film on SiO2/Al2O3 was achieved by combining a molecular-beam epitaxy of BST on Si/Al2O3 and a post-growth anneal in oxygen at elevated temperatures. The oxidation anneal not only converted the thin Si interlayer into amorphous SiO2 and eliminated the dielectric loss from the Si, but also relieved local strain in the film. The resulting BST film showed promising dielectric properties with 66% tunability and 0.016 dielectric loss, respectively. Additionally, temperature-dependent permittivity of the BST film resembled that of the bulk BST ceramics. (C) 2005 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Microstructures and dielectric tunable properties of Ba0.5Sr0.5TiO3–Li2MgTiO4 and Ba0.5Sr0.5TiO3–Li2Mg3TiO6 composite ceramics
    Zexing Fu
    Zhibo Xu
    Chong Liu
    Nannan Song
    Yebin Xu
    Journal of Materials Science: Materials in Electronics, 2023, 34
  • [32] Stress effect on the tuning properties of Ba0.5Sr0.5TiO3 thin films
    Kim, ID
    Park, JH
    Kim, HG
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (07) : F18 - F21
  • [33] The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films
    Chang, WT
    Horwitz, JS
    Carter, AC
    Pond, JM
    Kirchoefer, SW
    Gilmore, CM
    Chrisey, DB
    APPLIED PHYSICS LETTERS, 1999, 74 (07) : 1033 - 1035
  • [34] Microwave dielectric properties of BaTiO3 and Ba0.5Sr0.5TiO3 thin films on (001) MgO
    Alldredge, L. M. B.
    Chang, Wontae
    Kirchoefer, Steven W.
    Pond, Jeffrey M.
    APPLIED PHYSICS LETTERS, 2009, 95 (22)
  • [35] Structural and dielectric properties of Ba0.5Sr0.5TiO3 thin films grown on LAO with homo-epitaxial layer for tunable applications
    Sekhar, MC
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 18 (15): : 2153 - 2168
  • [36] Off-axis electron holography and microstructure of Ba0.5Sr0.5TiO3 thin films on LaAlO3 -: art. no. 115419
    Tian, HF
    Yu, HC
    Zhu, XH
    Wang, YG
    Zheng, DN
    Yang, HX
    Li, JQ
    PHYSICAL REVIEW B, 2005, 71 (11)
  • [37] Microstructure and dielectric properties of Ba0.5Sr0.5TiO3 ceramics by spark plasma sintering
    Xu Chunlai
    Zhou Heping
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 59 - 61
  • [38] Structural and dielectric properties of Ba0.5Sr0.5TiO3 thin films with an EPI-RuO2 bottom electrode
    Jia, QX
    Findikoglu, AT
    Zhou, R
    Foltyn, SR
    Wu, XD
    Smith, JL
    Wang, Q
    Evans, DF
    Gladfelter, WL
    INTEGRATED FERROELECTRICS, 1998, 19 (1-4) : 111 - 119
  • [39] Density functional theory calculation of the electronic structure of Ba0.5Sr0.5TiO3:: Photoluminescent properties and structural disorder -: art. no. 125115
    Longo, E
    Orhan, E
    Pontes, FM
    Pinheiro, CD
    Leite, ER
    Varela, JA
    Pizani, PS
    Boschi, TM
    Lanciotti, F
    Beltrán, A
    Andrés, J
    PHYSICAL REVIEW B, 2004, 69 (12)
  • [40] Dielectric properties of Si-Ba0.5Sr0.5TiO3 composite thin films elaborated by pulsed laser deposition -: art. no. 034106
    Cao, LZ
    Cheng, BL
    Wang, SY
    Zhou, YL
    Jin, KJ
    Lu, HB
    Chen, ZH
    Yang, GZ
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
12345