Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures

被引：9
作者：
Luo, B
Johnson, JW
Schoenfeld, D
Pearton, SJ
Ren, F
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Nucl & Radiol Engn, Gainesville, FL 32611 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 07期
关键词：
GaAs MESFET; irradiation I-V characteristics; TLM;
D O I：
10.1016/S0038-1101(01)00064-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of lambda -ray irradiation on GaAs MESFETs were studied. The lambda -ray irradiation was generated from a Co-60 source. DC characteristics of the MESFETs were used to monitor the effects of radiation, which included source-drain I-V characteristics, gate leakage current, saturation drain current, sub-threshold gate leakage current, and sheet resistance. These changes of device characteristics provided us a useful method to determine the radiation damage coefficient. (C) 2001 Elsevier Science Ltd. All rights reserved.
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收藏
页码：1149 / 1152
页数：4
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