Time dependence of organic polymer thin-film transistors current

被引：1

作者：

Martin, S ^{[1
]}

Dassas, L ^{[1
]}

Hamilton, MC ^{[1
]}

Kanicki, J ^{[1
]}

机构：

[1] Univ Michigan, Dept EECS, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

ORGANIC FIELD EFFECT TRANSISTORS II | 2003年 / 5217卷

关键词：

thin-film transistors; organic polymers; bias temperature stress; electrical instabilities; transient regime;

D O I：

10.1117/12.504536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results on the electrical characterization of gate-planarized organic polymer thin-film transistors (OP-TFTs). We investigated the time dependence of the OP-TFT current. Over a relatively short time range (several 100ms), we observed a decrease of the OP-TFT current corresponding to the establishment of the steady-state regime, and is slower when the transistor is in the weak accumulation regime or in the OFF-state. We believe that this is associated with carrier thermalization in the organic semiconductor. Over longer time scales, the decrease of the OP-TFT current is due to device aging and can be associated with a threshold voltage shift, up to 20V after an electrical stress at V-GS=-30V for 30min at room temperature. This shift is fully reversible once the gate polarization is removed and might be associated with charge trapping in the semiconductor.

引用

页码：7 / 15

页数：9

共 13 条

[1]

[Anonymous], THIN FILM TRANSISTOR

[2] Field-effect transistors made from solution-processed organic semiconductors [J].

Brown, AR ;

Jarrett, CP ;

deLeeuw, DM ;

Matters, M .

SYNTHETIC METALS, 1997, 88 (01) :37-55

[3] Organic thin-film transistors: A review of recent advances [J].

Dimitrakopoulos, CD ;

Mascaro, DJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) :11-27

[4]

Horowitz G, 1998, ADV MATER, V10, P365, DOI 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO

[5]

2-U

[6]

JACKSON TN, 2000, P 20 INT DISPL RES C, P411

[7]

KANICKI J, 2003, THIN FILM TRANSISTOR

[8] BIAS-STRESS-INDUCED STRETCHED-EXPONENTIAL TIME-DEPENDENCE OF CHARGE INJECTION AND TRAPPING IN AMORPHOUS THIN-FILM TRANSISTORS [J].

LIBSCH, FR ;

KANICKI, J .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1286-1288

[9] Gate-planarized organic polymer thin film transistors [J].

Martin, S ;

Nahm, JY ;

Kanicki, J .

JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (05) :512-519

[10]

MARTIN S, 2003, IN PRESS J SID

← 1 2 →