Direct growth of graphene pad on exfoliated hexagonal boron nitride surface

被引:88
|
作者
Son, Minhyeok
Lim, Hyunseob
Hong, Misun
Choi, Hee Cheul [1 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Dept Chem, San 31, Pohang 790784, South Korea
关键词
LARGE-AREA; HIGH-QUALITY; RAMAN; SUBSTRATE; CARBON; FILMS;
D O I
10.1039/c1nr10504c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A direct and metal layer-free growth of flat graphene pads on exfoliated hexagonal boron nitride substrate (h-BN) are demonstrated by atmospheric chemical vapour deposition (CVD) process. Round shape with high flatness graphene pads are grown in high yield (similar to 95%) with a pad thickness of similar to 0.5 nm and homogenous diameter.
引用
收藏
页码:3089 / 3093
页数:5
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