Dislocation-induced electronic levels in semi-insulated CdTe

被引：11

作者：

Babentsov, V. ^{[1
]}

Boiko, V. ^{[1
]}

Schepelskii, G. A. ^{[1
]}

James, R. B. ^{[2
]}

Franc, J. ^{[3
]}

Prochazka, J. ^{[3
]}

Hlidek, P. ^{[3
]}

机构：

[1] Natl Acad Sci, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Brookhaven Natl Lab, Nonproliferat & Natl Secur Dept, Upton, NY 11973 USA

[3] Charles Univ Prague, Inst Phys, Fac Math & Phys, CZ-12116 Prague, Czech Republic

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 633卷

关键词：

CdTe; Detectors; Dislocations; CADMIUM ZINC TELLURIDE; SINGLE-CRYSTALS; CD0.96ZN0.04TE; RADIATION; PHOTOLUMINESCENCE; ABSORPTION; EMISSION; DEFECTS;

D O I：

10.1016/j.nima.2010.06.129

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL) and compared our data with earlier results. We confirmed the direct correlation between Y-emission and dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2 x 10(5) cm(-2)). Plastic deformation also increased the concentrations of grown-in defects, namely, those of an important midgap level E(C)-0.74 eV in CdTe and Cd(1-x)Zn(x)Te (x < 0.1), the materials of choice in today's detector technology. Our findings demonstrate that dislocation-induced defects can degrade charge collection in radiation detectors. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S81 / S82

页数：2

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