Dark I-V-T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells

被引：59

作者：

Hussein, R ^{[1
]}

Borchert, D ^{[1
]}

Grabosch, G ^{[1
]}

Fahrner, WR ^{[1
]}

机构：

[1] Fern Univ Hagen, Chair Elect Dev, D-58084 Hagen, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 69卷 / 02期

关键词：

heterojunction; two-diode model; dark current;

D O I：

10.1016/S0927-0248(00)00385-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Heterojunction solar cells have been manufactured by depositing n-type a-Si:H on p-type 1-2 Omega cm Cz single-crystalline silicon substrates. An efficiency of 14.2% has been obtained for 1 cm(2) solar cells by using a simple (Al/(p) c-Si/(n) a-Si:Hi/ITO/metal grid) structure. With an additional surface texturing, we have reached an efficiency of 15.3% for 1 cm2 solar cells. We have investigated the dark IV-curves in order to contribute to a better understanding of the basis of solar cells. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：123 / 129

页数：7