Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs

被引：6

作者：

Li, Yufeng ^{[1
,2
,3
]}

Wang, Shuai ^{[1
,2
,3
]}

Su, Xilin ^{[1
,2
,3
]}

Tang, Weihan ^{[1
,2
,3
]}

Li, Qiang ^{[1
,2
,3
]}

Guo, Maofeng ^{[1
,2
,3
]}

Zhang, Ye ^{[1
,2
,3
]}

Zhang, Minyan ^{[1
,2
,3
]}

Yun, Feng ^{[1
,2
,3
]}

Hou, Xun ^{[1
,2
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Shaanxi, Peoples R China

[2] Xi An Jiao Tong Univ, Shaanxi Prov Key Lab Photon & Informat Technol, Xian 710049, Shaanxi, Peoples R China

[3] Xi An Jiao Tong Univ, Solid State Lighting Engn Res Ctr, Xian 710049, Shaanxi, Peoples R China

来源：

AIP ADVANCES | 2017年 / 7卷 / 11期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

Gallium nitride - Quantum efficiency - Silver - III-V semiconductors - Semiconductor quantum wells - Plasmonics - Aspect ratio - Light emitting diodes - Photoluminescence;

D O I：

10.1063/1.4998217

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ag coated microgroove with extreme large aspect-ratio of 500: 1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, which matches number calculated independently from the time-resolved photoluminescence measurement. With such Purcell Factor, the efficiency was greatly enhanced and the droop was significantly suppressed. (C) 2017 Author(s).

引用

页数：7

共 26 条

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