A modified method to simulate the dispersion properties of infrared nonlinear optical crystals

被引:5
|
作者
Xiao, Ruichun [1 ,2 ]
Wu, Haixin [1 ,2 ]
Ni, Youbao [1 ,2 ]
Wang, Zhenyou [1 ,2 ]
Huang, Changbao [1 ,2 ]
Qi, Ming [1 ,2 ]
Ge, Chuanwen [3 ]
机构
[1] Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 23001, Peoples R China
[2] Chinese Acad Sci, Anhui Prov Key Lab Photon Devices & Mat, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China
[3] PLA, Army Officer Acad, Hefei 230031, Peoples R China
基金
中国国家自然科学基金;
关键词
PHASE-MATCHING PROPERTIES; SELLMEIER COEFFICIENTS; CHALCOPYRITE CRYSTALS; MECHANISM; SEMICONDUCTORS; AGGAS2; CDSIP2; DENSITY; GAAS; SE;
D O I
10.1063/1.4916613
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents a modified method to study the dispersion properties of infrared nonlinear optical crystals, which takes advantage of the first principles calculations and oscillator model. The phonon effects play an important role in the dispersion properties, and obvious discrepancies between calculated and experimental results are found due to the lack of such effects in first principles optical property calculations. In order to compensate for such deficiency, the oscillator model was introduced. Phonon oscillator terms are added to the calculated dispersion equations, and the phonon oscillator coefficients can be obtained from first principles infrared dielectric property calculations. With the modified method, the simulated dispersion curves of GaAs, CdSiP2, AgGaS2, and ZnGeP2 crystals show excellent agreement with the experimental results. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:5
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