In-beam creep of SiCf/SiC minicomposites under uniaxial tensile loading

被引：2

作者：

Chen, Jiachao ^{[1
]}

Jacques, Sylvain ^{[2
]}

Barthe, Marie-France ^{[3
]}

Zhang, Chonghong ^{[4
]}

Desgardin, Pierre ^{[3
]}

机构：

[1] Paul Scherrer Inst, Dept Nucl Energy & Safety, CH-5232 Villigen, Switzerland

[2] Univ Bordeaux, CNRS, Lab Composites Thermostruct, Pessac 33600, France

[3] Univ Orleans, CNRS, CEMHTI, 3A Rue La Ferollerie, Orleans 45071 2, France

[4] Chinese Acad Sci, Inst Modern Phys, Lanzhou, Peoples R China

来源：

JOURNAL OF NUCLEAR MATERIALS | 2020年 / 533卷

关键词：

SiCf/SiC composite; High-temperature mechanical testing; Irradiation creep; Clamping system; IRRADIATION CREEP; SILICON-CARBIDE; SPECIMENS;

D O I：

10.1016/j.jnucmat.2020.152086

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A newly developed clamping system for ceramic specimen is described in the present report. By using this system, the uniaxial tensile loading was first successfully applied up to fracture (950 MPa) on a SiCf/SiC minicomposite. A minicomposite is a 1D model composite. It consists of a SiC-based fiber tow embedded in a SiC matrix, which has a diameter of about 0.5 mm. Afterwards, the irradiation creep properties of SiCf/SiC minicomposites were studied. In-situ creep was performed in an in-beam creep device under uniaxial tensile stresses from 40 to 382 MPa during homogeneous helium irradiation. Homogenous irradiation was carried out by helium implantation with energies varying from 0 to 45 MeV. The displacement dose rate was 1.2 x 10(-6) dpa/s. The average temperature was controlled to 700 and 900 degrees C within +/- 15 degrees C. Irradiation creep compliance of minicomposite was measured to be 3.07 x 10(-5) and 5.43 x 10(-5) dpa(-1) MPa-1 at 700 degrees C and 900 degrees C, respectively. (c) 2020 Elsevier B.V. All rights reserved.

引用

页数：7

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