Gate oxide reliability of 4H-SiC MOS devices

被引：18

作者：

Krishnaswami, S ^{[1
]}

Das, M ^{[1
]}

Hull, B ^{[1
]}

Ryu, SH ^{[1
]}

Scofield, J ^{[1
]}

Agarwal, A ^{[1
]}

Palmour, J ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

MOS reliability; TDDB; 4H-SiC; power MOSFET;

D O I：

10.1109/RELPHY.2005.1493158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the reliability of MOS-based 4H-SiC devices. Recent high temperature gate oxide breakdown measurements on MOS capacitors reveal that the gate oxides on as-grown epi surface are more reliable than that grown on ion-implanted and activated surface. The reduction in the oxide reliability on implanted surface is primarily due to the deterioration of surface morphology as a result of implant damage. In addition, preliminary measurements on forward IN characteristics and threshold voltage of power MOSFETs under a constant applied gate voltage of +20 V show the devices to be stable up to 88 hrs of operation at room temperature.

引用

页码：592 / 593

页数：2