Structural properties of In2Se3 precursor layers deposited by spray pyrolysis and physical vapor deposition for CuInSe2 thin-film solar cell applications

被引：16
|
作者：
Reyes-Figueroa, P. [1 ,2 ]
Painchaud, T. [2 ]
Lepetit, T. [2 ]
Harel, S. [2 ]
Arzel, L. [2 ]
Yi, Junsin [3 ]
Barreau, N. [2 ]
Velumani, S. [1 ,3 ]
机构：
[1] Cinvestav Zacatenco, Dept Elect Engn SEES, Mexico City 07360, DF, Mexico
[2] Univ Nantes, UMR 6502, IMN, F-44322 Nantes 3, France
[3] Sch Informat & Commun Engn, Suwon 440746, South Korea
来源：
THIN SOLID FILMS | 2015年 / 587卷
关键词：
Indium selenide; Copper indium selenide; Spray pyrolysis; Physical vapor deposition; CU(IN; GA)SE-2; ALPHA-IN2SE3;
D O I：
10.1016/j.tsf.2015.01.035
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural properties of In2Se3 precursor thin films grown by chemical spray pyrolysis (CSP) and physical vapor deposition (PVD) methods were compared. This is to investigate the feasibility to substitute PVD process of CuInSe2 (CISe) films by CSP films as precursor layer, thus decreasing the production cost by increasing material-utilization efficiency. Both films of 1 mu m thickness were deposited at the same substrate temperature of 380 degrees C. X-ray diffraction and Raman spectra confirm the formation of gamma-In2Se3 crystalline phase for both films. The PVD and CSP films exhibited (110) and (006) preferred orientations, respectively. The PVD films showed a smaller full width at half maximum value (0.09 degrees) compared with CSP layers (0.1 degrees). Films with the same crystalline phase but with different orientations are normally used in the preparation of high quality CISe films by 3-stage process. Scanning electron microscope cross-section images showed an important difference in grain size with well-defined larger grains of size 1-2 mu m in the PVD films as compared to CSP layers (600 nm). Another important characteristic that differentiates the two precursor films is the oxygen contamination. X-ray photoelectron spectroscopy showed the presence of oxygen in CSP films. The oxygen atoms could be bonded to indium by replacing Se vacancies, which are formed during CSP deposition. Taking account of the obtained results, such CSP films can be used as precursor layer in a PVD process in order to produce CISe absorber films. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：112 / 116
页数：5
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