Far-UV reflectance and stress of narrowband AIF3/LaF3 multilayers

被引:11
作者
Lopez-Reyes, Paloma [1 ]
Honrado-Benitez, Carlos [1 ]
Gutierrez-Luna, Nuria [1 ]
Rios-Fernandez, Alvaro [1 ]
Rodriguez-de Marcos, Luis, V [1 ,2 ,3 ]
Larruquert, Juan, I [1 ]
机构
[1] CSIC, Inst Opt, GOLD IO, Serrano 144, Madrid 28006, Spain
[2] Catholic Univ Amer, Greenbelt, MD 20771 USA
[3] NASA, Goddard Space Ctr, CRESST 2, Greenbelt, MD 20771 USA
关键词
HIGH-HARMONIC GENERATION; MECHANICAL-STRESS; THIN-FILMS; THERMAL-EXPANSION; LYMAN-ALPHA; FLUORIDE; NM; COATINGS; MIRRORS; AL;
D O I
10.1364/OME.446541
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Upcoming space instrumentation, such as LUMOS (LUVOIR Ultraviolet Multi-Object Spectrograph) in LUVOIR (Large Ultraviolet Optical Infrared Surveyor) mission, demands efficient narrowband coatings centered in the far UV (FUV). Narrowband FUV coatings can be prepared with all-dielectric multilayers (MLs) based on two fluorides. This research evaluates the performance of AlF3/LaF3 FUV MLs prepared by thermal evaporation and compares this performance with MgF2/LaF3 MLs, which were previously investigated. FUV reflectance, stress, and the influence of substrate materials have been investigated, along with ML stability over time when stored in a desiccator. Coatings were deposited both on fused silica and on CaF2 crystals, two common optical substrates. AlF3/LaF3 MLs exhibited reduced stress compared with MgF2/LaF3 MLs, resulting in a larger thickness threshold bet ire crack generation. This enables preparing MLs with more layers and hence with higher performance. AlF3/LaF3 MLs underwent lower reflectance decay over time compared with MgF2/LaF3 MLs. Fresh MLs centered at similar to 160 nm displayed a peak reflectance close to 100%, and most of the AlF3/LaF3 MLs kept a reflectance of 99% after several months of storage. The bandwidth of AlF3/LaF3 MLs for a given number of layers was found to be somewhat larger than for MgF2/LaF3 MLs. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:489 / 502
页数:14
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