Raman spectroscopy for probing chemically/physically induced phenomena in carbon nanotubes

被引：144
作者：
Souza, AG
Jorio, A
Samsonidze, GG
Dresselhaus, G
Saito, R
Dresselhaus, MS [1 ]
机构：
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[2] Univ Fed Ceara, Dept Fis, BR-60455900 Fortaleza, Ceara, Brazil
[3] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[4] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA
[5] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
[6] JST, CREST, Sendai, Miyagi 9808578, Japan
[7] MIT, Dept Phys, Cambridge, MA 02139 USA
来源：
NANOTECHNOLOGY | 2003年 / 14卷 / 10期
关键词：
D O I：
10.1088/0957-4484/14/10/311
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The use of recent advances in resonance Raman spectroscopy studies on isolated carbon nanotubes and the scientific knowledge achieved so far from these studies is discussed in the context of advancing carbon nanotube-based technology. Changes in the Raman spectra can be used to probe and monitor structural modifications of the nanotube sidewalls that come from the introduction of defects and the attachment of different chemical species. The former effect can be probed through the analysis of the disorder-induced Raman modes and the latter through the upshifts/downshifts observed in the various Raman modes due to charge transfer effects.
引用
收藏
页码：1130 / 1139
页数：10
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