Effect of TiON-MgO intermediate layer on microstructure and magnetic properties of L10 FePt-C-SiO2 films

被引：19

作者：

Deng, J. Y. ^{[1
]}

Dong, K. F. ^{[2
]}

Peng, Y. G. ^{[3
]}

Ju, G. P. ^{[3
]}

Hu, J. F. ^{[4
]}

Chow, G. M. ^{[1
]}

Chen, J. S. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore

[2] China Univ Geosci, Sch Automat, Wuhan 430074, Peoples R China

[3] Seagate Technol, Fremont, CA 94538 USA

[4] DSI, Singapore 117608, Singapore

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2016年 / 417卷

基金：

新加坡国家研究基金会;

关键词：

FePt HAMR;

D O I：

10.1016/j.jmmm.2016.05.096

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure and magnetic properties of L1(0) FePt-C-SiO2 films grown on TiON-MgO intermediate layer were studied. TiON-MgO layer was deposited by co-sputtering TiN and MgO-TiO2 targets at 380 degrees C. With increasing MgO-TiO2 doping concentration, the contact angle between FePt grains with intermediate layer gradually increased, and it was close to 90 degrees when the volume percentage of MgO-TiO2 reached 30%. At this condition, a high out-of-plane coercivity of 19.1 kOe was obtained, while the opening-up of in-plane M-H loop was very narrow. Moreover, it was found that the out-of-plane coercivity can be further improved to 21.6 kOe, by slightly increasing the percentage of MgO-TiO2 to 35 vol%. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：203 / 207

页数：5

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