High power Sb-free quantum cascade laser emitting at 3.3 μm above 350 K

被引：37

作者：

Bismuto, A. ^{[1
]}

Beck, M. ^{[1
]}

Faist, J. ^{[1
]}

机构：

[1] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 19期

关键词：

D O I：

10.1063/1.3589355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The design and implementation of a short wavelength strain-compensated quantum cascade laser based on In(0.72)Ga(0.28)As/In(0.52)Al(0.48)As-AlAs on InP is presented. We demonstrate watt-level room temperature emission at 3.3 mu m. Lasers operate in pulsed mode above 350 K. Threshold current densities of 3.6 kA/cm(2) and slope efficiencies of more than 600 mW/A are observed at room temperature. The laser performance is comparable with Sb-containing quantum cascade lasers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3589355]

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