Dipole Controlled Metal Gate with Hybrid Low Resistivity Cladding for Gate-Last CMOS with Low Vt

被引：12

作者：

Hinkle, C. L. ^{[1
]}

Galatage, R. V. ^{[1
]}

Chapman, R. A. ^{[1
]}

Vogel, E. M. ^{[1
]}

Alshareef, H. N. ^{[2
]}

Freeman, C. ^{[3
]}

Wimmer, E. ^{[3
]}

Niimi, H. ^{[4
]}

Li-Fatou, A. ^{[4
]}

Shaw, J. B. ^{[4
]}

Chambers, J. J. ^{[4
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] King Abdullah Univ Sci & Technol, Thuwal, Saudi Arabia

[3] Mat Design Inc, Angel Fire, NM 87710 USA

[4] Texas Instruments Inc, Adv CMOS, Dallas, TX 75243 USA

来源：

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2010年

关键词：

D O I：

10.1109/VLSIT.2010.5556220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this contribution, NMOS and PMOS band edge effective work function (EWF) and correspondingly low Vt are demonstrated using standard fab materials and processes in a gate-last scheme. For NMOS, the use of an Al cladding layer results in Vt = 0.08 V consistent with NMOS EWF = 4.15 eV. Migration of the Al cladding into the TiN and a relatively low oxygen concentration near the TiN/HfO2 interface are responsible for the low EWF. For PMOS, employing a W cladding layer along with a post-TiN anneal in an oxidizing ambient results in elevated oxygen concentration near the TiN/HfO2 interface and Vt = -0.20 V consistent with a PMOS EWF = 5.05 eV. First-principles calculations indicate N atoms displaced from the TiN during the oxidizing anneal form dipoles at the TiN/HfO2 interface that play a critical role in determining the PMOS EWF.

引用

页码：183 / +

页数：2

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