High Linearity 57-66 GHz SiGe Receiver for Outdoor Point-to-Point Communication

被引：0

作者：

Ben Yishay, Roee ^{[1
]}

Sheinman, Benny ^{[1
]}

Carmon, Roi ^{[1
]}

Vovnoboy, Jakob ^{[1
]}

Katz, Oded ^{[1
]}

Elad, Danny ^{[1
]}

机构：

[1] ON Semicond, Image Sensor Grp, Haifa, Israel

来源：

2018 13TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2018年

关键词：

60; GHz; V-Band; receiver; SiGe BiCMOS; mm-Wave integrated circuits; CHIPSET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully integrated receiver in a superhetrodyne architecture covering the entire 60 GHz frequency range (57-66 GHz) was designed and fabricated in 0.12 mu m SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, RF variable attenuator, IF variable gain amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and x3 frequency multiplier. The receiver chip achieve maximum gain of 65 dB, 5 dB minimum noise figure, better than 2 dBm IIP3 at high linearity mode, with >75 dB dynamic range, and consumes 630 mW.

引用

页码：49 / 52

页数：4

共 35 条

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