A 24-GHz and 60-GHz Dual-Band Standing-Wave VCO in 0.13μm CMOS Process

被引：14

作者：

Wu, Liang ^{[1
]}

Ng, Alan W. L. ^{[1
]}

Leung, Lincoln L. K. ^{[2
]}

Luong, Howard C. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Clear Water Bay, Hong Kong, Peoples R China

[2] Qualcomm, San Diego, CA USA

来源：

2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM | 2010年

关键词：

Voltage controlled oscillator; millimeter-wave; standing-wave; dual-band; CMOS; 24; GHz; 60;

D O I：

10.1109/RFIC.2010.5477265

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

By exploiting the intrinsic multiple oscillation modes of a standing-wave oscillator, a dual-band millimeter-wave VCO is designed. Implemented in 0.13 mu m CMOS with an area of 0.05mm(2), the VCO prototype measures a dualband operation at 24 GHz and 60 GHz with tuning range of 10.8% and 7.2%, phase noise of -120dBc/Hz and -114dBc/Hz at 10MHz offset, power consumption of 11mW and 24mW, corresponding to FoM of -177dB and -176dB, respectively.

引用

页码：145 / 148

页数：4

共 6 条

[1] Borremans J., 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, P324, DOI 10.1109/ISSCC.2008.4523188
[2] Design of wide-tuning-range millimeter-wave CMOS VCO with a standing-wave architecture
Chien, Jun-Chau
Lu, Liang-Hung
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (09) : 1942 - 1952
[3] Millimeter-wave CMOS design
Doan, CH
Emami, S
Niknejad, AM
Brodersen, RW
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) : 144 - 155
[4] A 75-GHz phase-locked loop in 90-nm CMOS technology
Lee, Jri
Liu, Mingchung
Wang, Huaide
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (06) : 1414 - 1426
[5] Design and Analysis of a 90 nm mm-Wave Oscillator Using Inductive-Division LC Tank
Li, Lianming
Reynaert, Patrick
Steyaert, Michiel S. J.
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (07) : 1950 - 1958
[6] SUJIANG R, 2007, CUST INT CIRC C SEPT, P817

← 1 →