Deep structural analysis of novel BGaN material layers grown by MOVPE

被引：34

作者：

Gautier, S. ^{[1
]}

Patriarche, G. ^{[2
]}

Moudakir, T. ^{[3
]}

Abid, M. ^{[4
]}

Orsal, G. ^{[1
]}

Pantzas, K. ^{[4
]}

Troadec, D. ^{[5
]}

Soltani, A. ^{[5
]}

Largeau, L. ^{[2
]}

Mauguin, O. ^{[2
]}

Ougazzaden, A. ^{[4
]}

机构：

[1] Univ Paul Verlaine de Metz, LMOPS, EA 4423, F-57070 Metz, France

[2] UPR, LPN CNRS, F-91450 Marcoussis, France

[3] Supelec, CNRS, UMI 2958GT, F-57070 Metz, France

[4] CNRS, Georgia Inst Technol GTL, UMI 2958GT, F-57070 Metz, France

[5] Univ Sci & Technol Lille, CNRS, IEMN, UMR 8520, F-59000 Lille, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 315卷 / 01期

关键词：

HAADF-STEM; MOVPE; BGaN; BORON; GAN;

D O I：

10.1016/j.jcrysgro.2010.08.042

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：288 / 291

页数：4

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