Deep-level transient spectroscopy (DLTS) of CdS/CuIn1GaxSe2-based solar cells prepared from electroplated and auto-plated precursors, and by physical vapor deposition

被引：8

作者：

Bhattacharya, RN ^{[1
]}

Balcioglu, A ^{[1
]}

Ramanathan, K ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2001年 / 384卷 / 01期

关键词：

DLTS; CuIn1-xGaxSe2; solar cells;

D O I：

10.1016/S0040-6090(00)01817-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated high-efficiency thin-film CuIn1-xGaxSe2-based solar cells from solution-based electroplated, auto-plated precursors and by physical vapor deposition. The devices were characterized by deep-level transient spectroscopy (DLTS). DLTS recorded a new electron trap level in addition to two hole (majority-carrier) trap levels and one electron (minority-carrier) trap level for low-efficiency devices. We believe that the additional electron trap level is an effective recombination center, which leads to the poor performance of the device. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：65 / 68

页数：4

共 14 条

[1] CHARACTERIZATION OF THE DEFECT LEVELS IN COPPER INDIUM DISELENIDE [J].