Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals

被引:68
作者
Chang, Jingjing [1 ]
Lin, Zhenhua [2 ]
Lin, Ming [3 ]
Zhu, Chunxiang [2 ]
Zhang, Jie [3 ]
Wu, Jishan [1 ,3 ]
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
关键词
LOW-TEMPERATURE FABRICATION; ZINC-OXIDE; SOL-GEL; BAND-GAP; PERFORMANCE;
D O I
10.1039/c4tc02257b
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reports solution-processed metal oxide semiconductor thin film transistors (TFTs), which were produced using fluorine (F) doped ZnO-based aqueous solution. It was found that doping F into the ZnO film improves thin film transparency and TFT performance with an ultrahigh on/off ratio of 10(8). The F doped ZnO TFT devices showed no improvement in shelf-life stability but improved bias stress stability. Moreover, when the ZnO: F was co-doped with alkali metals like Li, Na, and K, the co-doped ZnO TFT devices exhibited much higher electron mobility, in comparison with ZnO or the ZnO: F TFTs. In addition, the co-doped TFT device exhibited excellent shelf-life stability and bias stress stability. These results suggest that F and alkali metal co-doping can be a useful technique to produce more reliable and low temperature solution-processed ZnO semiconductors for TFTs and their applications.
引用
收藏
页码:1787 / 1793
页数:7
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