Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals

被引：68

作者：

Chang, Jingjing ^{[1
]}

Lin, Zhenhua ^{[2
]}

Lin, Ming ^{[3
]}

Zhu, Chunxiang ^{[2
]}

Zhang, Jie ^{[3
]}

Wu, Jishan ^{[1
,3
]}

机构：

[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 08期

关键词：

LOW-TEMPERATURE FABRICATION; ZINC-OXIDE; SOL-GEL; BAND-GAP; PERFORMANCE;

D O I：

10.1039/c4tc02257b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports solution-processed metal oxide semiconductor thin film transistors (TFTs), which were produced using fluorine (F) doped ZnO-based aqueous solution. It was found that doping F into the ZnO film improves thin film transparency and TFT performance with an ultrahigh on/off ratio of 10(8). The F doped ZnO TFT devices showed no improvement in shelf-life stability but improved bias stress stability. Moreover, when the ZnO: F was co-doped with alkali metals like Li, Na, and K, the co-doped ZnO TFT devices exhibited much higher electron mobility, in comparison with ZnO or the ZnO: F TFTs. In addition, the co-doped TFT device exhibited excellent shelf-life stability and bias stress stability. These results suggest that F and alkali metal co-doping can be a useful technique to produce more reliable and low temperature solution-processed ZnO semiconductors for TFTs and their applications.

引用

页码：1787 / 1793

页数：7

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